BLF6G38LS-100 Specs and Replacement
Type Designator: BLF6G38LS-100
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 34 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT502B
BLF6G38LS-100 substitution
- MOSFET ⓘ Cross-Reference Search
BLF6G38LS-100 datasheet
blf6g38-50 blf6g38ls-50.pdf
BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f (MHz) VDS (V) PL(AV)... See More ⇒
blf6g38-10 blf6g38-10g.pdf
BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 2 6 January 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR... See More ⇒
blf6g38-100 6g38ls-100.pdf
BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL... See More ⇒
Detailed specifications: BLF6G27LS-50BN, BLF6G27LS-75, BLF6G27S-45, BLF6G38-10, BLF6G38-100, BLF6G38-10G, BLF6G38-25, BLF6G38-50, AON6380, BLF6G38LS-50, BLF6G38S-25, BLF7G10L-250, BLF7G10LS-250, BLF7G15LS-200, BLF7G15LS-300P, BLF7G20L-200, BLF7G20L-250P
Keywords - BLF6G38LS-100 MOSFET specs
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History: F11S80C3
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