BLF7G20L-250P LDMOS Datasheet: N-Ch, 28V, 65A. Full specification with pinout and replacement list

BLF7G20L-250P Specs and Replacement

Type Designator: BLF7G20L-250P

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 65 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT539A

BLF7G20L-250P substitution

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BLF7G20L-250P datasheet

..1. Size:522K philips
blf7g20l-250p 7g20ls-250p.pdf pdf_icon

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒

4.1. Size:282K philips
blf7g20l-200 7g20ls-200.pdf pdf_icon

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f... See More ⇒

5.1. Size:100K philips
blf7g20l-160p blf7g20ls-160p.pdf pdf_icon

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f... See More ⇒

5.2. Size:210K philips
blf7g20l-90p blf7g20ls-90p.pdf pdf_icon

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq... See More ⇒

Detailed specifications: BLF6G38LS-100, BLF6G38LS-50, BLF6G38S-25, BLF7G10L-250, BLF7G10LS-250, BLF7G15LS-200, BLF7G15LS-300P, BLF7G20L-200, AO4407, BLF7G20L-90P, BLF7G20LS-140P, BLF7G20LS-200, BLF7G20LS-250P, BLF7G20LS-90P, BLF7G21L-160P, BLF7G21LS-160P, BLF7G22L-100P