All MOSFET. BLF7G20L-250P Datasheet

 

BLF7G20L-250P MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF7G20L-250P

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 28 V

Maximum Drain Current |Id|: 65 A

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: SOT539A

BLF7G20L-250P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF7G20L-250P Datasheet (PDF)

1.1. blf7g20l-250p 7g20ls-250p.pdf Size:522K _philips

BLF7G20L-250P
BLF7G20L-250P

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS

1.2. blf7g20l-160p blf7g20ls-160p.pdf Size:100K _philips

BLF7G20L-250P
BLF7G20L-250P

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq V

1.3. blf7g20l-90p blf7g20ls-90p.pdf Size:210K _philips

BLF7G20L-250P
BLF7G20L-250P

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS P

1.4. blf7g20l-200 7g20ls-200.pdf Size:282K _philips

BLF7G20L-250P
BLF7G20L-250P

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VD

Datasheet: BLF6G38LS-100 , BLF6G38LS-50 , BLF6G38S-25 , BLF7G10L-250 , BLF7G10LS-250 , BLF7G15LS-200 , BLF7G15LS-300P , BLF7G20L-200 , IRF1010E , BLF7G20L-90P , BLF7G20LS-140P , BLF7G20LS-200 , BLF7G20LS-250P , BLF7G20LS-90P , BLF7G21L-160P , BLF7G21LS-160P , BLF7G22L-100P .

 


BLF7G20L-250P
  BLF7G20L-250P
  BLF7G20L-250P
 

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