BLF7G20LS-140P LDMOS Datasheet: N-Ch, 28V, 14A. Full specification with pinout and replacement list

BLF7G20LS-140P Specs and Replacement

Type Designator: BLF7G20LS-140P

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 14 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT1121B

BLF7G20LS-140P substitution

- MOSFET ⓘ Cross-Reference Search

BLF7G20LS-140P datasheet

..1. Size:422K philips
blf7g20ls-140p.pdf pdf_icon

BLF7G20LS-140P Power LDMOS transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp... See More ⇒

3.1. Size:100K philips
blf7g20l-160p blf7g20ls-160p.pdf pdf_icon

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f... See More ⇒

4.1. Size:210K philips
blf7g20l-90p blf7g20ls-90p.pdf pdf_icon

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq... See More ⇒

6.1. Size:522K philips
blf7g20l-250p 7g20ls-250p.pdf pdf_icon

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒