BLF7G22L-100P PDF and Equivalents Search

 

BLF7G22L-100P Specs and Replacement

Type Designator: BLF7G22L-100P

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 12.3 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: SOT1121A

BLF7G22L-100P substitution

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BLF7G22L-100P datasheet

 ..1. Size:693K  nxp
blf7g22l-100p blf7g22ls-100p.pdf pdf_icon

BLF7G22L-100P

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V... See More ⇒

 4.1. Size:168K  nxp
blf7g22l-130 7g22ls-130.pdf pdf_icon

BLF7G22L-100P

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒

 4.2. Size:1126K  nxp
blf7g22l-160 7g22ls-160.pdf pdf_icon

BLF7G22L-100P

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation ... See More ⇒

 5.1. Size:199K  philips
blf7g22l-200 blf7g22ls-200.pdf pdf_icon

BLF7G22L-100P

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒

Detailed specifications: BLF7G20L-250P, BLF7G20L-90P, BLF7G20LS-140P, BLF7G20LS-200, BLF7G20LS-250P, BLF7G20LS-90P, BLF7G21L-160P, BLF7G21LS-160P, RFP50N06, BLF7G22L-130, BLF7G22L-160, BLF7G22L-200, BLF7G22L-250P, BLF7G22LS-100P, BLF7G22LS-130, BLF7G22LS-160, BLF7G22LS-200

Keywords - BLF7G22L-100P MOSFET specs

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 BLF7G22L-100P replacement

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