BLF7G22L-200 LDMOS Datasheet: N-Ch, 28V, 50A. Full specification with pinout and replacement list

BLF7G22L-200 Specs and Replacement

Type Designator: BLF7G22L-200

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 50 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: SOT502A

BLF7G22L-200 substitution

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BLF7G22L-200 datasheet

..1. Size:199K philips
blf7g22l-200 blf7g22ls-200.pdf pdf_icon

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒

4.1. Size:978K nxp
blf7g22l-250p 22ls-250p.pdf pdf_icon

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒

5.1. Size:693K nxp
blf7g22l-100p blf7g22ls-100p.pdf pdf_icon

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V... See More ⇒

5.2. Size:168K nxp
blf7g22l-130 7g22ls-130.pdf pdf_icon

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒