BLF7G22LS-200 MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF7G22LS-200
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: SOT502B
BLF7G22LS-200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF7G22LS-200 Datasheet (PDF)
blf7g22l-200 blf7g22ls-200.pdf
BLF7G22L-200; BLF7G22LS-200Power LDMOS transistorRev. 3 1 April 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
blf7g22l-100p blf7g22ls-100p.pdf
BLF7G22L-100P; BLF7G22LS-100PPower LDMOS transistorRev. 3 2 January 2012 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq V
blf7g22l-130 7g22ls-130.pdf
BLF7G22L-130; BLF7G22LS-130Power LDMOS transistorRev. 4 20 January 2011 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I
blf7g22l-250p 22ls-250p.pdf
BLF7G22L-250P; BLF7G22LS-250PPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I
blf7g22l-160 7g22ls-160.pdf
BLF7G22L-160; BLF7G22LS-160Power LDMOS transistorRev. 2.1 2 November 2011 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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