All MOSFET. BLF7G22LS-250P Datasheet

 

BLF7G22LS-250P MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF7G22LS-250P

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 28 V

Maximum Drain Current |Id|: 65 A

Maximum Drain-Source On-State Resistance (Rds): 0.081 Ohm

Package: SOT539B

BLF7G22LS-250P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF7G22LS-250P Datasheet (PDF)

1.1. blf7g22l-200 blf7g22ls-200.pdf Size:199K _philips

BLF7G22LS-250P
BLF7G22LS-250P

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VD

1.2. blf7g22l-100p blf7g22ls-100p.pdf Size:693K _nxp

BLF7G22LS-250P
BLF7G22LS-250P

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V

2.1. blf7g22l-250p 22ls-250p.pdf Size:978K _nxp

BLF7G22LS-250P
BLF7G22LS-250P

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

2.2. blf7g22l-160 7g22ls-160.pdf Size:1126K _nxp

BLF7G22LS-250P
BLF7G22LS-250P

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

2.3. blf7g22l-130 7g22ls-130.pdf Size:168K _nxp

BLF7G22LS-250P
BLF7G22LS-250P

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f I

Datasheet: BLF7G22L-130 , BLF7G22L-160 , BLF7G22L-200 , BLF7G22L-250P , BLF7G22LS-100P , BLF7G22LS-130 , BLF7G22LS-160 , BLF7G22LS-200 , SPA11N60C3 , BLF7G24L-100 , BLF7G24L-140 , BLF7G24LS-100 , BLF7G24LS-140 , BLF7G27L-100 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P .

 


BLF7G22LS-250P
  BLF7G22LS-250P
  BLF7G22LS-250P
 

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