BLF7G27L-140 LDMOS Datasheet: N-Ch, 28V, 28A. Full specification with pinout and replacement list

BLF7G27L-140 Specs and Replacement

Type Designator: BLF7G27L-140

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 28 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT502A

BLF7G27L-140 substitution

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BLF7G27L-140 datasheet

..1. Size:171K nxp
blf7g27l-140 7g27ls-140.pdf pdf_icon

BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq... See More ⇒

4.1. Size:165K philips
blf7g27l-100 blf7g27ls-100.pdf pdf_icon

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒

4.2. Size:304K philips
blf7g27l-150p 7g27ls-150p.pdf pdf_icon

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation ... See More ⇒

4.3. Size:273K nxp
blf7g27l-135.pdf pdf_icon