BLF7G27L-75P Specs and Replacement
Type Designator: BLF7G27L-75P
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 18 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: SOT1121A
BLF7G27L-75P substitution
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BLF7G27L-75P datasheet
blf7g27l-75p blf7g27ls-75p.pdf
BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq ... See More ⇒
blf7g27l-100 blf7g27ls-100.pdf
BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒
blf7g27l-150p 7g27ls-150p.pdf
BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation ... See More ⇒
Detailed specifications: BLF7G24L-140, BLF7G24LS-100, BLF7G24LS-140, BLF7G27L-100, BLF7G27L-135, BLF7G27L-140, BLF7G27L-150P, BLF7G27L-200PB, IRFZ46N, BLF7G27L-90P, BLF7G27LS-100, BLF7G27LS-140, BLF7G27LS-150P, BLF7G27LS-200PB, BLF7G27LS-75P, BLF7G27LS-90P, BLF861A
Keywords - BLF7G27L-75P MOSFET specs
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BLF7G27L-75P replacement
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