All MOSFET. BLF871S Datasheet

 

BLF871S MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF871S
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT467B

 BLF871S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF871S Datasheet (PDF)

 ..1. Size:587K  philips
blf871 blf871s.pdf

BLF871S
BLF871S

BLF871; BLF871SUHF power LDMOS transistorRev. 04 19 November 2009 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 8.1. Size:134K  philips
blf871.pdf

BLF871S
BLF871S

BLF871UHF power LDMOS transistorRev. 01 18 December 2008 Objective data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 100 W broadband from HF to 1 GHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransm

 9.1. Size:152K  philips
blf872 1.pdf

BLF871S
BLF871S

BLF872UHF power LDMOS transistorRev. 01 20 February 2006 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 250 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes

 9.2. Size:148K  nxp
blf878.pdf

BLF871S
BLF871S

BLF878UHF power LDMOS transistorRev. 02 15 June 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 300 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes it

 9.3. Size:516K  nxp
blf879p blf879ps.pdf

BLF871S
BLF871S

BLF879P; BLF879PSUHF power LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performance a

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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