2SK60 Specs and Replacement
Type Designator: 2SK60
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 170 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 120 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: TO3
2SK60 substitution
- MOSFET ⓘ Cross-Reference Search
2SK60 datasheet
2sk601.pdf
Silicon MOS FETs (Small Signal) 2SK601 2SK601 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Direct drive possible with CMOS, TTL 0.4 0.08 0.4 0.04 0.5 0.08 Downsizing of sets by mini-power type package and automatic inser- 1.5 0.1 3.0 0.15 tion by magazine packing are ava... See More ⇒
2sk601.pdf
2SK601 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs D ... See More ⇒
Detailed specifications: BLL6H1214-500, BLL6H1214L-250, BLL6H1214LS-250, BLM6G10-30, BLM6G10-30G, BLM6G22-30, BLM6G22-30G, 2SK1745, 2N7000, 2SJ238, BLS2933-100, BLS6G2731-120, BLS6G2731-6G, 2SJ559, BLS6G2731S-120, BLS6G2731S-130, BLS6G2735L-30
Keywords - 2SK60 MOSFET specs
2SK60 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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