2SK60 PDF and Equivalents Search

 

2SK60 Specs and Replacement

Type Designator: 2SK60

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 170 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 120 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm

Package: TO3

2SK60 substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK60 datasheet

 ..1. Size:61K  sony
2sk60.pdf pdf_icon

2SK60

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 0.1. Size:33K  panasonic
2sk601.pdf pdf_icon

2SK60

Silicon MOS FETs (Small Signal) 2SK601 2SK601 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Direct drive possible with CMOS, TTL 0.4 0.08 0.4 0.04 0.5 0.08 Downsizing of sets by mini-power type package and automatic inser- 1.5 0.1 3.0 0.15 tion by magazine packing are ava... See More ⇒

 0.2. Size:357K  panasonic
2sk606.pdf pdf_icon

2SK60

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 0.3. Size:838K  cn vbsemi
2sk601.pdf pdf_icon

2SK60

2SK601 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs D ... See More ⇒

Detailed specifications: BLL6H1214-500, BLL6H1214L-250, BLL6H1214LS-250, BLM6G10-30, BLM6G10-30G, BLM6G22-30, BLM6G22-30G, 2SK1745, 2N7000, 2SJ238, BLS2933-100, BLS6G2731-120, BLS6G2731-6G, 2SJ559, BLS6G2731S-120, BLS6G2731S-130, BLS6G2735L-30

Keywords - 2SK60 MOSFET specs

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