BLS6G2735L-30
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS6G2735L-30
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 8.2
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58
Ohm
Package: SOT1135A
BLS6G2735L-30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS6G2735L-30
Datasheet (PDF)
..1. Size:681K nxp
bls6g2735l-30 bls6g2735ls-30.pdf 
BLS6G2735L-30; BLS6G2735LS-30S-band LDMOS transistorRev. 3 24 September 2012 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.Table 1. Application informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 50 mA.Test signal f VDS PL
6.1. Size:70K philips
bls6g2731-6g.pdf
BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of
6.2. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf
BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te
6.3. Size:134K nxp
bls6g2731s-130.pdf
BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod
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