BLS6G2735L-30 LDMOS Datasheet: N-Ch, 32V, 8.2A. Full specification with pinout and replacement list

BLS6G2735L-30 Specs and Replacement

Type Designator: BLS6G2735L-30

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: SOT1135A

BLS6G2735L-30 substitution

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BLS6G2735L-30 datasheet

..1. Size:681K nxp
bls6g2735l-30 bls6g2735ls-30.pdf pdf_icon

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 50 mA. Test signal f VDS PL... See More ⇒

6.1. Size:70K philips
bls6g2731-6g.pdf pdf_icon

BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of ... See More ⇒

6.2. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production te... See More ⇒

6.3. Size:134K nxp
bls6g2731s-130.pdf pdf_icon

BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod... See More ⇒

Detailed specifications: 2SK60, 2SJ238, BLS2933-100, BLS6G2731-120, BLS6G2731-6G, 2SJ559, BLS6G2731S-120, BLS6G2731S-130, 2SK3878, BLS6G2735LS-30, BLS6G2933P-200, BLS6G2933S-130, BLS6G3135-120, BLS6G3135-20, BLS6G3135S-120, BLS6G3135S-20, BLS7G2325L-105