BLS6G3135-120 Datasheet and Replacement

BLS6G3135-120;BLS6G3135S-120LDMOS S-Band radar power transistorRev. 02 29 May 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-ABproduction test ci

BLS6G3135-20;BLS6G3135S-20LDMOS S-Band radar power transistorRev. 03 3 March 2009 Product data sheet1. Product profile1.1 General description20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 50 mA; in a class-ABproduction test circu

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

BLS6G2933S-130LDMOS S-band radar power transistorRev. 03 3 March 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mode o

BLS6G2933P-200LDMOS S-Band radar pallet amplifierRev. 01 28 May 2010 Objective data sheet1. Product profile1.1 General description200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(1dB) Gp D IDq(GHz)

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

BLS6G2735L-30; BLS6G2735LS-30S-band LDMOS transistorRev. 3 24 September 2012 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.Table 1. Application informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 50 mA.Test signal f VDS PL