BLS7G2729L-350P
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS7G2729L-350P
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 350
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 39
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package: SOT539A
BLS7G2729L-350P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS7G2729L-350P
Datasheet (PDF)
0.1. Size:166K nxp
bls7g2729l-350p ls-350p.pdf
BLS7G2729L-350P; BLS7G2729LS-350PLDMOS S-band radar power transistorRev. 5 16 May 2014 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
8.1. Size:121K nxp
bls7g2933s-150.pdf
BLS7G2933S-150LDMOS S-band radar power transistorRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod
8.2. Size:292K nxp
bls7g2325l-105.pdf
BLS7G2325L-105Power LDMOS transistorRev. 2 19 July 2011 Product data sheet1. Product profile1.1 General description105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp
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