BLS7G2933S-150 MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS7G2933S-150
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 33 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: SOT922-1
BLS7G2933S-150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS7G2933S-150 Datasheet (PDF)
bls7g2933s-150.pdf
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BLS7G2729L-350P; BLS7G2729LS-350PLDMOS S-band radar power transistorRev. 5 16 May 2014 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
bls7g2325l-105.pdf
BLS7G2325L-105Power LDMOS transistorRev. 2 19 July 2011 Product data sheet1. Product profile1.1 General description105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp
bls7g3135l-350p 7g3135ls-350p.pdf
BLS7G3135L-350P; BLS7G3135LS-350PLDMOS S-band radar power transistorRev. 3 29 October 2013 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB produc
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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