BLS7G2933S-150 LDMOS Datasheet: N-Ch, 32V, 33A. Full specification with pinout and replacement list

BLS7G2933S-150 Specs and Replacement

Type Designator: BLS7G2933S-150

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V

|Id| ⓘ - Maximum Drain Current: 33 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT922-1

BLS7G2933S-150 substitution

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BLS7G2933S-150 datasheet

..1. Size:121K nxp
bls7g2933s-150.pdf pdf_icon

BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod... See More ⇒

8.1. Size:166K nxp
bls7g2729l-350p ls-350p.pdf pdf_icon

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB... See More ⇒

8.2. Size:292K nxp
bls7g2325l-105.pdf pdf_icon

BLS7G2325L-105 Power LDMOS transistor Rev. 2 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ... See More ⇒

9.1. Size:182K nxp
bls7g3135l-350p 7g3135ls-350p.pdf pdf_icon

BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 29 October 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB produc... See More ⇒

Detailed specifications: BLS6G2933S-130, BLS6G3135-120, BLS6G3135-20, BLS6G3135S-120, BLS6G3135S-20, BLS7G2325L-105, BLS7G2729L-350P, BLS7G2729LS-350P, SKD502T, BLS7G3135L-350P, BLS7G3135LS-350P, 2SK3408, BSH103, BSH105, BSH108, BSH111, BSH114