BLS7G3135LS-350P MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS7G3135LS-350P
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Id|ⓘ - Maximum Drain Current: 39 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT539B
BLS7G3135LS-350P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS7G3135LS-350P Datasheet (PDF)
bls7g3135l-350p 7g3135ls-350p.pdf
BLS7G3135L-350P; BLS7G3135LS-350PLDMOS S-band radar power transistorRev. 3 29 October 2013 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB produc
bls7g2729l-350p ls-350p.pdf
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bls7g2933s-150.pdf
BLS7G2933S-150LDMOS S-band radar power transistorRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod
bls7g2325l-105.pdf
BLS7G2325L-105Power LDMOS transistorRev. 2 19 July 2011 Product data sheet1. Product profile1.1 General description105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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