All MOSFET. BSS84AKV Datasheet

 

BSS84AKV MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS84AKV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 0.17 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT666

 BSS84AKV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS84AKV Datasheet (PDF)

 ..1. Size:1426K  nxp
bss84akv.pdf

BSS84AKV BSS84AKV

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

 7.1. Size:1030K  nxp
bss84akmb.pdf

BSS84AKV BSS84AKV

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.2. Size:1420K  nxp
bss84ak.pdf

BSS84AKV BSS84AKV

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

 7.3. Size:1431K  nxp
bss84aks.pdf

BSS84AKV BSS84AKV

BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

 7.4. Size:1421K  nxp
bss84akw.pdf

BSS84AKV BSS84AKV

BSS84AKW50 V, 150 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switchin

 7.5. Size:1411K  nxp
bss84akm.pdf

BSS84AKV BSS84AKV

BSS84AKM50 V, 230 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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