All MOSFET. BUK6209-30C Datasheet

 

BUK6209-30C Datasheet and Replacement


   Type Designator: BUK6209-30C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: DPAK
 

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BUK6209-30C Datasheet (PDF)

 ..1. Size:359K  philips
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BUK6209-30C

BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.1. Size:160K  philips
 buk6207-55c.pdf pdf_icon

BUK6209-30C

BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 8.2. Size:363K  philips
 buk6207-30c.pdf pdf_icon

BUK6209-30C

BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.3. Size:365K  philips
 buk6208-40c.pdf pdf_icon

BUK6209-30C

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

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Datasheet: BSS84AKM , BSS84AKS , BSS84AKT , BSS84AKV , BSS84AKW , BSS87 , BST82 , BUK6207-55C , RU7088R , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A , BUK6213-30C , BUK6215-75C , BUK6217-55C , BUK6218-40C .

History: AP2608GY

Keywords - BUK6209-30C MOSFET datasheet

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