BUK6215-75C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK6215-75C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 128 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 61.8 nC
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: DPAK
BUK6215-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK6215-75C Datasheet (PDF)
1.1. buk6215-75c.pdf 
Size:218K _philips
BUK6215-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
4.1. buk6213-30c.pdf Size:171K _philips
BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor
4.2. buk6212-40c.pdf Size:180K _philips
BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical app
4.3. buk6217-55c.pdf Size:201K _philips
BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor
4.4. buk6211-75c.pdf Size:211K _philips
BUK6211-75C N-channel TrenchMOS FET Rev. 02 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance au
4.5. buk6210-55c.pdf Size:357K _philips
BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform
4.6. buk6218-40c.pdf Size:364K _philips
BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applic
Datasheet: BST82 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A , BUK6213-30C , 2SK105 , BUK6217-55C , BUK6218-40C , BUK6226-75C , BUK6228-55C , BUK6246-75C , BUK624R5-30C , BUK625R0-40C , BUK625R2-30C .
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