BUK6215-75C MOSFET. Datasheet pdf. Equivalent

BUK6215-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK6215-75C Datasheet (PDF)

1.1. buk6215-75c.pdf Size:218K _philips

BUK6215-75C N-channel TrenchMOS FET Rev. 02 � 4 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

4.1. buk6212-40c.pdf Size:180K _philips

BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 � 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical app

4.2. buk6211-75c.pdf Size:211K _philips

BUK6211-75C N-channel TrenchMOS FET Rev. 02 � 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance au

 4.3. buk6213-30c.pdf Size:171K _philips

BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 � 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

4.4. buk6218-40c.pdf Size:364K _philips

BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 � 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applic

 4.5. buk6210-55c.pdf Size:357K _philips

BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 � 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform

4.6. buk6217-55c.pdf Size:201K _philips

BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 � 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

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MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |