BUK6215-75C PDF and Equivalents Search

 

BUK6215-75C PDF Specs and Replacement


   Type Designator: BUK6215-75C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DPAK
 

 BUK6215-75C substitution

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BUK6215-75C PDF Specs

 ..1. Size:218K  philips
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BUK6215-75C

BUK6215-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance ... See More ⇒

 8.1. Size:364K  philips
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BUK6215-75C

BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a... See More ⇒

 8.2. Size:180K  philips
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BUK6215-75C

BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica... See More ⇒

 8.3. Size:357K  philips
buk6210-55c.pdf pdf_icon

BUK6215-75C

BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

Detailed specifications: BST82 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A , BUK6213-30C , AON7403 , BUK6217-55C , BUK6218-40C , BUK6226-75C , BUK6228-55C , BUK6246-75C , BUK624R5-30C , BUK625R0-40C , BUK625R2-30C .

History: K3569-FP

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