BUK6217-55C PDF and Equivalents Search

 

BUK6217-55C Specs and Replacement

Type Designator: BUK6217-55C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: DPAK

BUK6217-55C substitution

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BUK6217-55C datasheet

 ..1. Size:201K  philips
buk6217-55c.pdf pdf_icon

BUK6217-55C

BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒

 8.1. Size:364K  philips
buk6218-40c.pdf pdf_icon

BUK6217-55C

BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a... See More ⇒

 8.2. Size:180K  philips
buk6212-40c.pdf pdf_icon

BUK6217-55C

BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica... See More ⇒

 8.3. Size:357K  philips
buk6210-55c.pdf pdf_icon

BUK6217-55C

BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

Detailed specifications: BUK6207-55C, BUK6209-30C, BUK6210-55C, BUK6211-75C, BUK6212-40C, BUK6213-30A, BUK6213-30C, BUK6215-75C, K2611, BUK6218-40C, BUK6226-75C, BUK6228-55C, BUK6246-75C, BUK624R5-30C, BUK625R0-40C, BUK625R2-30C, BUK626R2-40C

Keywords - BUK6217-55C MOSFET specs

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