BUK6217-55C Specs and Replacement
Type Designator: BUK6217-55C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: DPAK
BUK6217-55C substitution
- MOSFET ⓘ Cross-Reference Search
BUK6217-55C datasheet
buk6217-55c.pdf
BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
buk6218-40c.pdf
BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a... See More ⇒
buk6212-40c.pdf
BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica... See More ⇒
buk6210-55c.pdf
BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒
Detailed specifications: BUK6207-55C, BUK6209-30C, BUK6210-55C, BUK6211-75C, BUK6212-40C, BUK6213-30A, BUK6213-30C, BUK6215-75C, K2611, BUK6218-40C, BUK6226-75C, BUK6228-55C, BUK6246-75C, BUK624R5-30C, BUK625R0-40C, BUK625R2-30C, BUK626R2-40C
Keywords - BUK6217-55C MOSFET specs
BUK6217-55C cross reference
BUK6217-55C equivalent finder
BUK6217-55C pdf lookup
BUK6217-55C substitution
BUK6217-55C replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP6P064J
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sd313 | 2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815
