BUK6507-55C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK6507-55C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 82 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220AB
BUK6507-55C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK6507-55C Datasheet (PDF)
buk6507-55c.pdf
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