All MOSFET. BUK654R6-55C Datasheet

 

BUK654R6-55C Datasheet and Replacement


   Type Designator: BUK654R6-55C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 204 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO220AB
 

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BUK654R6-55C Datasheet (PDF)

 ..1. Size:187K  philips
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BUK654R6-55C

BUK654R6-55CN-channel TrenchMOS intermediate level FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati

 7.1. Size:177K  philips
buk654r0-75c.pdf pdf_icon

BUK654R6-55C

BUK654R0-75CN-channel TrenchMOS FETRev. 03 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 7.2. Size:194K  philips
buk654r8-40c.pdf pdf_icon

BUK654R6-55C

BUK654R8-40CN-channel TrenchMOS intermediate level FETRev. 03 12 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.1. Size:369K  philips
buk652r7-30c.pdf pdf_icon

BUK654R6-55C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

Datasheet: BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C , IRFP260N , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C .

History: SDD06N70 | AP4423GM | 2SK3435-Z | NCEP035N12D | VBA2305 | 2SK783 | AUIRLS4030-7P

Keywords - BUK654R6-55C MOSFET datasheet

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