BUK654R6-55C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK654R6-55C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 204 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Drain Current |Id|: 100 A
Maximum Drain-Source On-State Resistance (Rds): 0.0054 Ohm
Package: TO220AB
BUK654R6-55C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK654R6-55C PDF doc:
1.1. buk654r6-55c.pdf 
Size:187K _philips
BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
3.1. buk654r0-75c.pdf Size:177K _philips
BUK654R0-75C N-channel TrenchMOS FET Rev. 03 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti
3.2. buk654r8-40c.pdf Size:194K _philips
BUK654R8-40C N-channel TrenchMOS intermediate level FET Rev. 03 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perf
Datasheet: BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C , IRFZ46N , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C .
