BUK6607-75C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK6607-75C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 204 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 123 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: D2PAK
BUK6607-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK6607-75C Datasheet (PDF)
buk6607-75c.pdf
BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
buk6607-75c.pdf
BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
buk6607-55c.pdf
BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u
buk6607-55c.pdf
BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u
buk662r7-55c.pdf
BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk663r5-30c.pdf
BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk661r9-40c.pdf
BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
buk6610-75c.pdf
BUK6610-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
buk663r5-55c.pdf
BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk662r5-30c.pdf
BUK662R5-30CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk661r8-30c.pdf
BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 02 28 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk663r7-75c.pdf
BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
buk664r4-55c.pdf
BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat
buk663r2-40c.pdf
BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk662r7-55c.pdf
BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk663r5-30c.pdf
BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk661r9-40c.pdf
BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
buk6610-75c.pdf
BUK6610-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
buk661r8-30c.pdf
BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 2.1 18 August 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk663r7-75c.pdf
BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
buk664r4-55c.pdf
BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat
buk663r2-40c.pdf
BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk664r6-40c.pdf
BUK664R6-40CN-channel TrenchMOS intermediate level FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk662r4-40c.pdf
BUK662R4-40CN-channel TrenchMOS FETRev. 2 2 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
Datasheet: BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , AON6414A , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C .
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