All MOSFET. BUK661R9-40C Datasheet

 

BUK661R9-40C Datasheet and Replacement


   Type Designator: BUK661R9-40C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: D2PAK
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BUK661R9-40C Datasheet (PDF)

 ..1. Size:371K  philips
 buk661r9-40c.pdf pdf_icon

BUK661R9-40C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 ..2. Size:943K  nxp
 buk661r9-40c.pdf pdf_icon

BUK661R9-40C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.1. Size:395K  philips
 buk661r8-30c.pdf pdf_icon

BUK661R9-40C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 02 28 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:750K  nxp
 buk661r8-30c.pdf pdf_icon

BUK661R9-40C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 2.1 18 August 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

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