BUK662R5-30C PDF and Equivalents Search

 

BUK662R5-30C Specs and Replacement

Type Designator: BUK662R5-30C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 204 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: D2PAK

BUK662R5-30C substitution

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BUK662R5-30C datasheet

 ..1. Size:353K  philips
 buk662r5-30c.pdf pdf_icon

BUK662R5-30C

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒

 7.1. Size:180K  philips
 buk662r7-55c.pdf pdf_icon

BUK662R5-30C

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

 7.2. Size:912K  nxp
 buk662r7-55c.pdf pdf_icon

BUK662R5-30C

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

 7.3. Size:937K  nxp
 buk662r4-40c.pdf pdf_icon

BUK662R5-30C

BUK662R4-40C N-channel TrenchMOS FET Rev. 2 2 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒

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Detailed specifications: BUK655R0-75C, BUK6607-55C, BUK6607-75C, BUK6610-75C, BUK661R6-30C, BUK661R8-30C, BUK661R9-40C, BUK662R4-40C, 2N7000, BUK662R7-55C, BUK663R2-40C, BUK663R5-30C, BUK663R5-55C, BUK663R7-75C, BUK664R4-55C, BUK664R6-40C, BUK664R8-75C

Keywords - BUK662R5-30C MOSFET specs

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