All MOSFET. BUK6E3R4-40C Datasheet

 

BUK6E3R4-40C Datasheet and Replacement


   Type Designator: BUK6E3R4-40C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 204 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: I2PAK
 

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BUK6E3R4-40C Datasheet (PDF)

 ..1. Size:350K  philips
 buk6e3r4-40c.pdf pdf_icon

BUK6E3R4-40C

BUK6E3R4-40CN-channel TrenchMOS intermediate level FETRev. 3 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:181K  philips
 buk6e3r2-55c.pdf pdf_icon

BUK6E3R4-40C

BUK6E3R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.1. Size:373K  philips
 buk6e2r3-40c.pdf pdf_icon

BUK6E3R4-40C

BUK6E2R3-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.2. Size:181K  philips
 buk6e2r0-30c.pdf pdf_icon

BUK6E3R4-40C

BUK6E2R0-30CN-channel TrenchMOS intermediate level FETRev. 02 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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Datasheet: BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , 5N60 , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , BUK7107-55ATE , BUK7108-40AIE , BUK7109-75AIE .

History: AOT210L | IXTP130N10T

Keywords - BUK6E3R4-40C MOSFET datasheet

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