All MOSFET. BUK7107-55ATE Datasheet

 

BUK7107-55ATE Datasheet and Replacement


   Type Designator: BUK7107-55ATE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: D2PAK
 

 BUK7107-55ATE substitution

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BUK7107-55ATE Datasheet (PDF)

 3.1. Size:326K  philips
buk7107-55aie buk7907-55aie.pdf pdf_icon

BUK7107-55ATE

BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK

 6.1. Size:346K  philips
buk7107-40atc buk7907-40atc.pdf pdf_icon

BUK7107-55ATE

BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42

 8.1. Size:346K  philips
buk7109-75ate buk7909-75ate.pdf pdf_icon

BUK7107-55ATE

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE

 8.2. Size:143K  philips
buk7105-40aie buk7905-40aie.pdf pdf_icon

BUK7107-55ATE

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

Datasheet: BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , IRF9540N , BUK7108-40AIE , BUK7109-75AIE , BUK7109-75ATE , BUK714R1-40BT , BUK7207-30B , BUK7208-40B , BUK7210-55B , BUK7212-55B .

History: GSM3400

Keywords - BUK7107-55ATE MOSFET datasheet

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