BUK7109-75AIE
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7109-75AIE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 272
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 121
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
D2PAK
BUK7109-75AIE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7109-75AIE
Datasheet (PDF)
..1. Size:331K philips
buk7109-75aie buk7909-75aie.pdf 
BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7
3.1. Size:346K philips
buk7109-75ate buk7909-75ate.pdf
BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE
8.1. Size:143K philips
buk7105-40aie buk7905-40aie.pdf
BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
8.2. Size:346K philips
buk7107-40atc buk7907-40atc.pdf
BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42
8.3. Size:341K philips
buk7105-40ate buk7905-40ate.pdf
BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (
8.4. Size:326K philips
buk7107-55aie buk7907-55aie.pdf
BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK
8.5. Size:332K philips
buk7108-40aie buk7908-40aie.pdf
BUK71/7908-40AIETrenchPLUS standard level FETRev. 02 24 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
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