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BUK714R1-40BT Specs and Replacement


   Type Designator: BUK714R1-40BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: D2PAK
 

 BUK714R1-40BT substitution

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BUK714R1-40BT Specs

 ..1. Size:119K  philips
buk714r1-40bt buk794r1-40bt.pdf pdf_icon

BUK714R1-40BT

BUK71/794R1-40BT TrenchMOS standard level FET Rev. 01 4 November 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability BUK714R1-40BT in SO... See More ⇒

 9.1. Size:346K  philips
buk7109-75ate buk7909-75ate.pdf pdf_icon

BUK714R1-40BT

BUK71/7909-75ATE TrenchPLUS standard level FET Rev. 01 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and a TrenchPLUS diode for temperature sensing. Product availability BUK7109-75ATE in SOT426 (D2-PAK) BUK7909-75ATE ... See More ⇒

 9.2. Size:143K  philips
buk7105-40aie buk7905-40aie.pdf pdf_icon

BUK714R1-40BT

BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 04 6 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated c... See More ⇒

 9.3. Size:346K  philips
buk7107-40atc buk7907-40atc.pdf pdf_icon

BUK714R1-40BT

BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing. Product availability BUK7107-40ATC in SOT42... See More ⇒

Detailed specifications: BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , BUK7107-55ATE , BUK7108-40AIE , BUK7109-75AIE , BUK7109-75ATE , 12N60 , BUK7207-30B , BUK7208-40B , BUK7210-55B , BUK7212-55B , BUK7214-75B , BUK72150-55A , BUK7215-55A , BUK7219-55A .

Keywords - BUK714R1-40BT MOSFET specs

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