BUK7215-55A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7215-55A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 115
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 62
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 50
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
DPAK
BUK7215-55A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7215-55A
Datasheet (PDF)
..1. Size:822K nxp
buk7215-55a.pdf 
BUK7215-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
7.1. Size:956K nxp
buk72150-55a.pdf
BUK72150-55AN-channel TrenchMOS standard level FETRev. 03 26 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
8.1. Size:111K philips
buk7213-40a.pdf
BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications
8.2. Size:191K philips
buk7210-55b.pdf
BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
8.3. Size:284K philips
buk7219-55a 01.pdf
BUK7219-55ATrenchMOS standard level FETRev. 01 02 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
8.4. Size:113K philips
buk7213 40a.pdf
BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications
8.5. Size:870K nxp
buk7219-55a.pdf
BUK7219-55AN-channel TrenchMOS standard level FETRev. 02 3 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
8.6. Size:726K nxp
buk7210-55b.pdf
BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u
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