All MOSFET. BUK7510-55AL Datasheet

 

BUK7510-55AL MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7510-55AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO220AB

BUK7510-55AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7510-55AL Datasheet (PDF)

1.1. buk7510-55al.pdf Size:210K _philips

BUK7510-55AL
BUK7510-55AL

BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 03 — 4 August 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

2.1. buk7510-30 1.pdf Size:50K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7510-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V ’trench’ technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

 4.1. buk7518-55 2.pdf Size:52K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 57 A features very low on-state resistanc

4.2. buk75150-55a buk76150-55a.pdf Size:299K _philips

BUK7510-55AL
BUK7510-55AL

BUK75/76150-55A TrenchMOS™ standard level FET Rev. 02 — 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Standard level compatible. 1.3 Applications Aut

 4.3. buk7515-100a.pdf Size:218K _philips

BUK7510-55AL
BUK7510-55AL

BUK7515-100A N-channel TrenchMOS standard level FET Rev. 3 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

4.4. buk7516-55a buk7616-55a.pdf Size:306K _philips

BUK7510-55AL
BUK7510-55AL

BUK7516-55A; BUK7616-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q

 4.5. buk75150 buk76150 55a-01.pdf Size:302K _philips

BUK7510-55AL
BUK7510-55AL

BUK75150-55A; BUK76150-55A TrenchMOS™ standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK75150-55A in SOT78 (TO-220AB) BUK76150-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technolo

4.6. buk7518-30 1.pdf Size:48K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V ’trench’ technology. The device ID Drain current (DC) 55 A features very low on-state resistanc

4.7. buk7514-55a buk7614-55a.pdf Size:68K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using ’trench’ technology w

4.8. buk7514-55 2.pdf Size:52K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 68 A features very low on-state resistanc

4.9. buk7515-100a 1.pdf Size:50K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7515-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V ’trench’ technology which features ID Drain current (DC) 75 A very low on-state resistance.

4.10. buk7514-30 1.pdf Size:50K _philips

BUK7510-55AL
BUK7510-55AL

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V ’trench’ technology. The device ID Drain current (DC) 69 A features very low on-state resistanc

Datasheet: BUK7506-75B , BUK7507-30B , BUK7507-55B , BUK7508-40B , BUK7508-55A , BUK7509-55A , BUK7509-75A , BUK7510-100B , IRLR2905 , BUK7511-55A , BUK7511-55B , BUK7513-75B , BUK7514-55A , BUK75150-55A , BUK7515-100A , BUK7516-55A , BUK7520-100A .

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