BUK7520-100A MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUK7520-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220AB

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BUK7520-100A Datasheet (PDF)

..1. Size:315K philips
buk7520-100a buk7620-100a.pdf pdf_icon

BUK7520-100A;BUK7620-100ATrenchMOS standard level FETRev. 01 5 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7520-100A in SOT78 (TO-220AB)BUK7620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS

6.1. Size:52K philips
buk7520-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 52 Afeatures very low on-state

8.1. Size:314K philips
buk7524-55a buk7524-55a buk7624-55a.pdf pdf_icon

BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 02 01 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D2-PAK).2. Features TrenchMOS techno

8.2. Size:96K philips
buk7528-55a buk7628-55a.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 41 AUsing trench tec

8.3. Size:222K philips
buk752r3-40c.pdf pdf_icon

BUK752R3-40CN-channel TrenchMOS standard level FETRev. 03 26 January 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance

8.4. Size:80K philips
buk7528 buk7628-100a.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench

8.5. Size:313K philips
buk7524 buk7624 55a-01.pdf pdf_icon

BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 01 25 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

8.6. Size:294K philips
buk7526-100b buk7626-100b.pdf pdf_icon

BUK75/7626-100BTrenchMOS standard level FETRev. 01 11 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7526-100B in SOT78 (TO-220AB)BUK7626-100B in SOT404 (D2-PAK).1.2 Features Very low on

8.7. Size:52K philips
buk7524-55 3.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7524-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 45 Afeatures very low on-state

8.8. Size:310K philips
buk7523-75a buk7623-75a.pdf pdf_icon

BUK7523-75A; BUK7623-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7523-75A in SOT78 (TO-220AB)BUK7623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

8.9. Size:52K philips
buk7528-55.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 40 Afeatures very low on-state

8.10. Size:211K nxp
buk752r7-60e.pdf pdf_icon

BUK752R7-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

8.11. Size:212K nxp
buk752r3-40e.pdf pdf_icon

BUK752R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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All MOSFET. BUK7520-100A Datasheet

BUK7520-100A MOSFET. Datasheet pdf. Equivalent

BUK7520-100A Datasheet (PDF)

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