All MOSFET. BUK752R3-40C Datasheet

 

BUK752R3-40C MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK752R3-40C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 333 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0023 Ohm

Package: TO220AB

BUK752R3-40C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK752R3-40C Datasheet (PDF)

1.1. buk752r3-40c.pdf Size:222K _philips

BUK752R3-40C
BUK752R3-40C

BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance autom

4.1. buk7528-55.pdf Size:52K _philips

BUK752R3-40C
BUK752R3-40C

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 40 A features very low on-state resistanc

4.2. buk7523-75a buk7623-75a.pdf Size:310K _philips

BUK752R3-40C
BUK752R3-40C

BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q

4.3. buk7524-55 3.pdf Size:52K _philips

BUK752R3-40C
BUK752R3-40C

Philips Semiconductors Product specification TrenchMOS? transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 45 A features very low on-state resistanc

4.4. buk7524 buk7624 55a-01.pdf Size:313K _philips

BUK752R3-40C
BUK752R3-40C

BUK7524-55A; BUK7624-55A TrenchMOS™ standard level FET Rev. 01 — 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q

4.5. buk7524-55a buk7624-55a.pdf Size:314K _philips

BUK752R3-40C
BUK752R3-40C

BUK7524-55A; BUK7624-55A TrenchMOS™ standard level FET Rev. 02 — 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101

4.6. buk7528-55a buk7628-55a.pdf Size:96K _philips

BUK752R3-40C
BUK752R3-40C

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using ’trench’ technology w

4.7. buk7520-55 2.pdf Size:52K _philips

BUK752R3-40C
BUK752R3-40C

Philips Semiconductors Product specification TrenchMOS? transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 52 A features very low on-state resistanc

4.8. buk7520-100a buk7620-100a.pdf Size:315K _philips

BUK752R3-40C
BUK752R3-40C

BUK7520-100A; BUK7620-100A TrenchMOS™ standard level FET Rev. 01 — 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7520-100A in SOT78 (TO-220AB) BUK7620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technolog

4.9. buk7526-100b buk7626-100b.pdf Size:294K _philips

BUK752R3-40C
BUK752R3-40C

BUK75/7626-100B TrenchMOS™ standard level FET Rev. 01 — 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

4.10. buk7528 buk7628-100a.pdf Size:80K _philips

BUK752R3-40C
BUK752R3-40C

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using ’trench’ technolog

Datasheet: BUK7515-100A , BUK7516-55A , BUK7520-100A , BUK7520-55A , BUK7523-75A , BUK7526-100B , BUK7528-100A , BUK7528-55A , FDS4435 , BUK752R7-30B , BUK7535-100A , BUK7535-55A , BUK753R1-40B , BUK753R4-30B , BUK7540-100A , BUK754R0-40C , BUK754R0-55B .

 


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