BUK752R7-30B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK752R7-30B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 91 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO220AB
BUK752R7-30B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK752R7-30B Datasheet (PDF)
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