BUK7606-55A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7606-55A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm
Package: D2PAK
BUK7606-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7606-55A Datasheet (PDF)
1.1. buk7606-55a 1.pdf 
Size:56K _philips
Philips Semiconductors Product specification TrenchMOS? transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the device Ptot
1.2. buk7506-55a buk7606-55a.pdf Size:320K _philips
BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant
2.1. buk7606-30 1.pdf Size:52K _philips
Philips Semiconductors Product specification TrenchMOS? transistor BUK7606-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The device Ptot T
2.2. buk7506-75b buk7606-75b.pdf Size:322K _philips
BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resista
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