All MOSFET. BUK7619-100B Datasheet

 

BUK7619-100B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7619-100B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 53 nC

Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm

Package: D2PAK

BUK7619-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7619-100B Datasheet (PDF)

1.1. buk7619-100b.pdf Size:93K _philips

BUK7619-100B
BUK7619-100B

BUK7619-100B N-channel TrenchMOS standard level FET Rev. 01 10 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible 1.3 Applic

4.1. buk761r3-30e.pdf Size:235K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK761R3-30E N-channel TrenchMOS standard level FET Rev. 3 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant

4.2. buk76150-55a.pdf Size:292K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK75/76150-55A TrenchMOS™ standard level FET Rev. 02 — 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Standard level compatible. 1.3 Applicat

 4.3. buk7613-100e.pdf Size:209K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK7613-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repeti

4.4. buk761r4-30e.pdf Size:209K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK761R4-30E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repeti

 4.5. buk761r7-40e.pdf Size:250K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK761R7-40E N-channel TrenchMOS standard level FET 4 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated

4.6. buk761r6-40e.pdf Size:258K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK761R6-40E N-channel TrenchMOS standard level FET 5 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rate

4.7. buk7616-55a.pdf Size:306K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK7516-55A; BUK7616-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ tec

4.8. buk7614-55.pdf Size:52K _update_mosfet

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A ’trench’ technology the devi

4.9. buk761r5-40e.pdf Size:257K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK761R5-40E N-channel TrenchMOS standard level FET 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated •

4.10. buk7615-100a.pdf Size:54K _update_mosfet

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A ’trench’ technology the d

4.11. buk7613-60e.pdf Size:204K _update_mosfet

BUK7619-100B
BUK7619-100B

BUK7613-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

4.12. buk7614-30 1.pdf Size:53K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7614-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 69 A trench technology. The device Ptot T

4.13. buk75150-55a buk76150-55a.pdf Size:299K _philips

BUK7619-100B
BUK7619-100B

BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applications Aut

4.14. buk7516-55a buk7616-55a.pdf Size:306K _philips

BUK7619-100B
BUK7619-100B

BUK7516-55A; BUK7616-55A TrenchMOS standard level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.15. buk7610-55al.pdf Size:195K _philips

BUK7619-100B
BUK7619-100B

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate A

4.16. buk75150 buk76150 55a-01.pdf Size:302K _philips

BUK7619-100B
BUK7619-100B

BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK75150-55A in SOT78 (TO-220AB) BUK76150-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolo

4.17. buk7514-55a buk7614-55a.pdf Size:68K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench technology w

4.18. buk7618-55 1.pdf Size:55K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7618-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 57 A trench technology the device Ptot T

4.19. buk7615-100a 1.pdf Size:55K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the device Pto

4.20. buk7618-30 1.pdf Size:51K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7618-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 55 A trench technology. The device Ptot T

4.21. buk7614-55 1.pdf Size:55K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the device Ptot T

4.22. buk761r8-30c.pdf Size:203K _philips

BUK7619-100B
BUK7619-100B

BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technology 1

4.23. buk7610-30 1.pdf Size:53K _philips

BUK7619-100B
BUK7619-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7610-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The device Ptot T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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