BUK7905-40AI
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7905-40AI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 272
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 127
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package: TO2205
BUK7905-40AI
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7905-40AI
Datasheet (PDF)
0.1. Size:143K philips
buk7105-40aie buk7905-40aie.pdf
BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
3.1. Size:341K philips
buk7105-40ate buk7905-40ate.pdf
BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (
7.1. Size:121K philips
buk7905 40ai-01.pdf
BUK7905-40AITrenchPLUS standard level FETRev. 01 9 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUScurrent sensing.1.2 Features Integrated current sensor Standard level compatible.1.3 Applications Va
Datasheet: IRFP360LC
, IRFP3710
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, IRFP440
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