BUK7Y12-55B Specs and Replacement

Type Designator: BUK7Y12-55B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: LFPAK

BUK7Y12-55B substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK7Y12-55B datasheet

 ..1. Size:790K  nxp
buk7y12-55b.pdf pdf_icon

BUK7Y12-55B

BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

 6.1. Size:295K  nxp
buk7y12-100e.pdf pdf_icon

BUK7Y12-55B

BUK7Y12-100E N-channel 100 V, 12 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

 6.2. Size:312K  nxp
buk7y12-40e.pdf pdf_icon

BUK7Y12-55B

BUK7Y12-40E N-channel 40 V, 12 m standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

 8.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y12-55B

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

Detailed specifications: BUK7E2R7-30B, BUK7E4R3-75C, BUK7L06-34ARC, BUK7L11-34ARC, BUK7Y07-30B, BUK7Y08-40B, BUK7Y102-100B, BUK7Y10-30B, IRF2807, BUK7Y13-40B, BUK7Y18-55B, BUK7Y18-75B, BUK7Y20-30B, BUK7Y25-40B, BUK7Y28-75B, BUK7Y33-100B, BUK7Y35-55B

Keywords - BUK7Y12-55B MOSFET specs

 BUK7Y12-55B cross reference

 BUK7Y12-55B equivalent finder

 BUK7Y12-55B pdf lookup

 BUK7Y12-55B substitution

 BUK7Y12-55B replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.