75309D Specs and Replacement
Type Designator: 75309D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO252AA
75309D substitution
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75309D datasheet
hufa75309d3 hufa75309d3s hufa75309p3.pdf
HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs 19A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models... See More ⇒
huf75309t3st.pdf
HUF75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE M... See More ⇒
hufa75309t3st.pdf
HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE ... See More ⇒
Detailed specifications: 40819 , 40820 , 40821 , 40822 , 40823 , 40841 , 75307D3 , 75307P3 , AO4468 , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , 75329P , 75329S , 75333G .
Keywords - 75309D MOSFET specs
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