75309D
MOSFET. Datasheet pdf. Equivalent
Type Designator: 75309D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO252AA
75309D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75309D
Datasheet (PDF)
0.1. Size:215K fairchild semi
hufa75309d3 hufa75309d3s hufa75309p3.pdf
HUFA75309P3, HUFA75309D3, HUFA75309D3SData Sheet December 200119A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 19A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
9.1. Size:180K fairchild semi
huf75309t3st.pdf
HUF75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE M
9.2. Size:171K fairchild semi
hufa75309t3st.pdf
HUFA75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE
Datasheet: 40819
, 40820
, 40821
, 40822
, 40823
, 40841
, 75307D3
, 75307P3
, MDF11N65B
, 75309P3
, 75321D3
, 75321P
, 75321S
, 75329G
, 75329P
, 75329S
, 75333G
.