75309D Datasheet and Replacement
Type Designator: 75309D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO252AA
75309D substitution
75309D Datasheet (PDF)
hufa75309d3 hufa75309d3s hufa75309p3.pdf

HUFA75309P3, HUFA75309D3, HUFA75309D3SData Sheet December 200119A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 19A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
huf75309t3st.pdf

HUF75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE M
hufa75309t3st.pdf

HUFA75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE
Datasheet: 40819 , 40820 , 40821 , 40822 , 40823 , 40841 , 75307D3 , 75307P3 , IRFP064N , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , 75329P , 75329S , 75333G .
History: SSF65R120S2 | FCP125N65S3R0 | FQB34N20 | 2SK4151 | IPS80R1K2P7 | IXFP7N80PM | NTGS4111PT
Keywords - 75309D MOSFET datasheet
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History: SSF65R120S2 | FCP125N65S3R0 | FQB34N20 | 2SK4151 | IPS80R1K2P7 | IXFP7N80PM | NTGS4111PT



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