BUK9209-40B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9209-40B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 185 °C
Qgⓘ - Total Gate Charge: 32 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DPAK
BUK9209-40B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9209-40B Datasheet (PDF)
buk9209-40b.pdf
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buk9207-30b.pdf
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buk9245.pdf
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buk9213-30a.pdf
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buk9226 75a-01.pdf
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buk9237 55a-01.pdf
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buk9240-100a.pdf
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buk9275 100a-01.pdf
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buk9219 55a-01.pdf
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buk9214-30a.pdf
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buk9230 55a-02.pdf
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buk92150-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device
buk9219-55a.pdf
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buk9222-55a.pdf
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buk9230-100b.pdf
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buk9275-100a.pdf
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buk9237-55a.pdf
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buk9240-100a.pdf
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buk92150-55a.pdf
BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l
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BUK9277-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Q101 compliant
buk9225-55a.pdf
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buk9214-30a.pdf
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buk9226-75a.pdf
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buk9240-100a.pdf
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buk9230-55a.pdf
isc N-Channel MOSFET Transistor BUK9230-55AFEATURESDrain Current : I = 88A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 27m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT1201R5BVR
History: APT1201R5BVR
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918