All MOSFET. BUK9209-40B Datasheet

 

BUK9209-40B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9209-40B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 185 °C
   Qgⓘ - Total Gate Charge: 32 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DPAK

 BUK9209-40B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9209-40B Datasheet (PDF)

 ..1. Size:953K  nxp
buk9209-40b.pdf

BUK9209-40B
BUK9209-40B

BUK9209-40BN-channel TrenchMOS logic level FETRev. 03 15 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.1. Size:957K  nxp
buk9207-30b.pdf

BUK9209-40B
BUK9209-40B

BUK9207-30BN-channel TrenchMOS logic level FETRev. 03 16 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.1. Size:296K  philips
buk9245.pdf

BUK9209-40B
BUK9209-40B

BUK9245-55ATrenchMOS logic level FETRev. 01 11 October 2001 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9245-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic le

 9.2. Size:276K  philips
buk9213-30a.pdf

BUK9209-40B
BUK9209-40B

BUK9213-30ATrenchMOS logic level FETRev. 01 29 July 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9213-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

 9.3. Size:290K  philips
buk9226 75a-01.pdf

BUK9209-40B
BUK9209-40B

BUK9226-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.4. Size:304K  philips
buk9237 55a-01.pdf

BUK9209-40B
BUK9209-40B

BUK9237-55ATrenchMOS logic level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9237-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.5. Size:291K  philips
buk9240-100a.pdf

BUK9209-40B
BUK9209-40B

BUK9240-100ATrenchMOS logic level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9240-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

 9.6. Size:286K  philips
buk9275 100a-01.pdf

BUK9209-40B
BUK9209-40B

BUK9275-100ATrenchMOS logic level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9275-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

 9.7. Size:294K  philips
buk9219 55a-01.pdf

BUK9209-40B
BUK9209-40B

BUK9219-55ATrenchMOS logic level FETRev. 01 24 October 2000 Product specificationM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated

 9.8. Size:292K  philips
buk9214-30a.pdf

BUK9209-40B
BUK9209-40B

BUK9214-30ATrenchMOS logic level FETRev. 01 20 March 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9214-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

 9.9. Size:290K  philips
buk9230 55a-02.pdf

BUK9209-40B
BUK9209-40B

BUK9230-55ATrenchMOS logic level FETRev. 02 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9230-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.10. Size:65K  philips
buk92150-55a 1.pdf

BUK9209-40B
BUK9209-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device

 9.11. Size:802K  nxp
buk9219-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9219-55AN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.12. Size:966K  nxp
buk9222-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9222-55AN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 9.13. Size:812K  nxp
buk9230-100b.pdf

BUK9209-40B
BUK9209-40B

BUK9230-100BN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

 9.14. Size:953K  nxp
buk9275-100a.pdf

BUK9209-40B
BUK9209-40B

BUK9275-100AN-channel TrenchMOS logic level FETRev. 03 15 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 9.15. Size:1002K  nxp
buk9237-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9237-55AN-channel TrenchMOS logic level FETRev. 3 9 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

 9.16. Size:962K  nxp
buk9240-100a.pdf

BUK9209-40B
BUK9209-40B

BUK9240-100AN-channel TrenchMOS logic level FETRev. 02 15 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 9.17. Size:719K  nxp
buk92150-55a.pdf

BUK9209-40B
BUK9209-40B

BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l

 9.18. Size:742K  nxp
buk9277-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9277-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Q101 compliant

 9.19. Size:970K  nxp
buk9225-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9225-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 9.20. Size:969K  nxp
buk9212-55b.pdf

BUK9209-40B
BUK9209-40B

BUK9212-55BN-channel TrenchMOS logic level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 9.21. Size:756K  nxp
buk9214-30a.pdf

BUK9209-40B
BUK9209-40B

BUK9214-30AN-channel TrenchMOS logic level FETRev. 3 14 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.22. Size:824K  nxp
buk9226-75a.pdf

BUK9209-40B
BUK9209-40B

BUK9226-75AN-channel TrenchMOS logic level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 9.23. Size:725K  nxp
buk9215-55a.pdf

BUK9209-40B
BUK9209-40B

BUK9215-55AN-channel TrenchMOS logic level FET7 April 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 complian

 9.24. Size:287K  inchange semiconductor
buk9240-100a.pdf

BUK9209-40B
BUK9209-40B

isc N-Channel MOSFET Transistor BUK9240-100AFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 38.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid driv

 9.25. Size:259K  inchange semiconductor
buk9230-55a.pdf

BUK9209-40B
BUK9209-40B

isc N-Channel MOSFET Transistor BUK9230-55AFEATURESDrain Current : I = 88A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 27m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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