BUK9212-55B PDF and Equivalents Search

 ..1. Size:969K  nxp
 buk9212-55b.pdf

BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu... See More ⇒

 8.1. Size:276K  philips
 buk9213-30a.pdf

BUK9213-30A TrenchMOS logic level FET Rev. 01 29 July 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9213-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level ... See More ⇒

 8.2. Size:294K  philips
 buk9219 55a-01.pdf

BUK9219-55A TrenchMOS logic level FET Rev. 01 24 October 2000 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated ... See More ⇒

 8.3. Size:292K  philips
 buk9214-30a.pdf

BUK9214-30A TrenchMOS logic level FET Rev. 01 20 March 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9214-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve... See More ⇒

 8.4. Size:65K  philips
 buk92150-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 10.7 A the device... See More ⇒

 8.5. Size:802K  nxp
 buk9219-55a.pdf

BUK9219-55A N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 8.6. Size:719K  nxp
 buk92150-55a.pdf

BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction l... See More ⇒

 8.7. Size:756K  nxp
 buk9214-30a.pdf

BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 8.8. Size:725K  nxp
 buk9215-55a.pdf

BUK9215-55A N-channel TrenchMOS logic level FET 7 April 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 complian... See More ⇒