75309P3 MOSFET. Datasheet pdf. Equivalent
Type Designator: 75309P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO220AB
75309P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75309P3 Datasheet (PDF)
0.1. hufa75309d3 hufa75309d3s hufa75309p3.pdf 
Size:215K _fairchild_semi
HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs • 19A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models
9.1. huf75309t3st.pdf Size:180K _fairchild_semi
HUF75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE® M
9.2. hufa75309t3st.pdf Size:171K _fairchild_semi
HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE®
Datasheet: 40820 , 40821 , 40822 , 40823 , 40841 , 75307D3 , 75307P3 , 75309D , APT50M38JFLL , 75321D3 , 75321P , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P .
