All MOSFET. BUK9230-55A Datasheet

 

BUK9230-55A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9230-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: DPAK

 BUK9230-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9230-55A Datasheet (PDF)

 ..1. Size:259K  inchange semiconductor
 buk9230-55a.pdf

BUK9230-55A BUK9230-55A

isc N-Channel MOSFET Transistor BUK9230-55AFEATURESDrain Current : I = 88A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 27m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 6.1. Size:812K  nxp
 buk9230-100b.pdf

BUK9230-55A BUK9230-55A

BUK9230-100BN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

 7.1. Size:290K  philips
 buk9230 55a-02.pdf

BUK9230-55A BUK9230-55A

BUK9230-55ATrenchMOS logic level FETRev. 02 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9230-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.1. Size:304K  philips
 buk9237 55a-01.pdf

BUK9230-55A BUK9230-55A

BUK9237-55ATrenchMOS logic level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9237-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.2. Size:1002K  nxp
 buk9237-55a.pdf

BUK9230-55A BUK9230-55A

BUK9237-55AN-channel TrenchMOS logic level FETRev. 3 9 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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