All Transistors. Equivalents Search

View am3407pe detailed specification:

Analog Power AM3407PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 34 @ VGS = -4.5V -5 Low thermal impedance -20 48 @ VGS = -2.5V -3 Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Drain 1,2,5,6 Gate 3 TSOP6 Source 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 TA=25 C -5 ID Continuous Drain Current a TA=100 C A -3.3 Pulsed Drain Current b IDM -20 IS -1 A Continuous Source Current (Diode Conduction) a TA=25 C PD 1.40 W Power Dissipation a Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 am3407pe.pdf Design, MOSFET, Power

 am3407pe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 am3407pe.pdf Database, Innovation, IC, Electricity