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APT10025JLC 1000V 34A 0.250W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOTOP D Lower Gate Charge Lower Input Capacitance Faster Switching Easier To Drive G 100% Avalanche Tested Popular SOT-227 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT10025JLC UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 34 Amps IDM Pulsed Drain Current 1 136 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissip... See More ⇒

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