View apt10025pvr detailed specification:

apt10025pvrapt10025pvr

APT10025PVR 1000V 33A 0.250 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT10025PVR UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 33 Amps IDM Pulsed Drain Current 1 132 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 625 Watts PD Linear Derating Factor 5.0 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL ... See More ⇒

 

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