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View apt1002r4bn detailed specification:

D TO-247 G APT1002RBN 1000V 7.0A 2.00 S APT1002R4BN 1000V 6.5A 2.40 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 7.0 6.5 Amps IDM Pulsed Drain Current 1 28 26 VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25 C 240 Watts PD Linear Derating Factor 1.96 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT APT1002RBN 1000 Drain-Source Breakdown Voltage BVDSS Volts (VGS = 0V, ID = 250 A) APT1002R4BN 1000 On State Drain Current... See More ⇒

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