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View apt6025bvr detailed specification:

APT6025BVR 600V 25A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage Popular TO-247 Package G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT6025BVR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 25 Amps IDM Pulsed Drain Current 1 100 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 370 Watts PD Linear Derating Factor 2.96 W/ C TJ,TSTG Operating and Storage Junction Temperature Rang... See More ⇒

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