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APT60M75JVR 600V 62A 0.075 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 Package G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT60M75JVR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 62 Amps IDM Pulsed Drain Current 1 248 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 700 Watts PD Linear Derating Factor 5.6 W/ C TJ,TSTG Operating and Storage Ju... See More ⇒

 

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