View apt60m75 detailed specification:
APT60M75JVR 600V 62A 0.075 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 Package G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT60M75JVR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 62 Amps IDM Pulsed Drain Current 1 248 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 700 Watts PD Linear Derating Factor 5.6 W/ C TJ,TSTG Operating and Storage Ju... See More ⇒
Keywords - ALL TRANSISTORS SPECS
apt60m75.pdf Design, MOSFET, Power
apt60m75.pdf RoHS Compliant, Service, Triacs, Semiconductor
apt60m75.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



