View apt60m75pvr detailed specification:

apt60m75pvrapt60m75pvr

APT60M75PVR 600V 60.5A 0.075 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage New High Power P-Pack Package G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT60M75PVR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 60.5 Amps IDM Pulsed Drain Current 1 242 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 625 Watts PD Linear Derating Factor 5.0 W/ C TJ,TSTG Operating and Storage Junction Tem... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 apt60m75pvr.pdf Design, MOSFET, Power

 apt60m75pvr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt60m75pvr.pdf Database, Innovation, IC, Electricity